发明名称 Method of forming socket contacts
摘要 In a socket used to house semiconductor die during testing, a recessed socket contact and methods of making the same are provided that avoid pinching the die's contacts. Semiconductor fabrication techniques are used to construct a dense array of contacts by forming a plurality of interconnected silicon electric contacts on a substrate having a first side and a second side, each silicon electric contact having a portion connected to the first side of the substrate and a portion extending from the first side of the substrate, applying an alignment-preserving material to the second side of the substrate having the plurality of interconnected silicon electric contacts formed on the side thereof, and disconnecting the plurality of interconnected silicon electric contacts from having electrical connection therebetween.
申请公布号 US7183194(B2) 申请公布日期 2007.02.27
申请号 US20040852318 申请日期 2004.05.24
申请人 MICRON TECHNOLOGY, INC. 发明人 FARNWORTH WARREN M.
分类号 H01L21/4763;G01R1/04;G01R31/26;H01L21/66;H01L23/48;H01L23/52;H01R13/24;H01R33/74;H01R43/00;H05K3/32;H05K7/10 主分类号 H01L21/4763
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