| 发明名称 |
Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same |
| 摘要 |
A polycrystalline silicon thin film to be used in display devices, the thin film having adjacent primary grain boundaries that are not parallel to each other, wherein an area surrounded by the primary grain boundaries is larger than 1 mum<SUP>2</SUP>, a fabrication method of the polycrystalline silicon thin film, and a thin film transistor fabricated using the method.
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| 申请公布号 |
US7183571(B2) |
申请公布日期 |
2007.02.27 |
| 申请号 |
US20030694030 |
申请日期 |
2003.10.28 |
| 申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
PARK JI YONG;PARK HYE HYANG |
| 分类号 |
G02F1/136;H01L29/04;B23K26/073;H01L21/00;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L27/15;H01L29/26;H01L29/786;H01L31/036;H01L31/12;H05B33/00 |
主分类号 |
G02F1/136 |
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