发明名称 System and method for charge-balanced, continuous-write mask and wafer process for improved colinearity
摘要 A charge-balanced, continuous-write mask and wafer process changes the magneto resistive photo-definition step to a two-mask step operation. Critical images are written on one mask layer at a very small electron beam spot size, and non-critical images are written on a second mask layer at a relatively larger electron beam spot size. Both mask layers are put onto the same glass substrate where the critical mask layer is located at the most accurate position on the substrate. The non-critical images may be placed in a peripheral field. In wafer processing, the critical field is aligned and exposed onto the wafer and then the non-critical field is aligned and exposed.
申请公布号 US7185310(B2) 申请公布日期 2007.02.27
申请号 US20040823981 申请日期 2004.04.14
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES 发明人 ALMES ROBIN LYNN;CHURCH MARK ANTHONY;GUTBERLET MARY KATHYRN;TSAY JIUNN;WANG BENJAMIN LU CHEN
分类号 G06F17/50;G03F7/20;G11B5/31;G11B5/39 主分类号 G06F17/50
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