Embedded MIM capacitor and zigzag inductor scheme

摘要

A new method to form RF devices in the manufacture of an integrated circuit device is achieved. The method comprises providing a substrate. A top metal level is defined overlying the substrate. The top metal level comprises pads and portions of planned RF devices. A first passivation layer is formed overlying the top metal level. The first passivation layer is patterned to selectively expose the pads and the parts of planned RF devices. A dielectric layer is formed overlying the top metal level and the first passivation layer. The dielectric layer is patterned to selectively expose the top metal level. An RF metal level is defined overlying the dielectric layer and the top metal level to thereby complete the RF devices. A second passivation layer is formed overlying the RF metal level, the dielectric layer, and the top metal level. The second passivation layer is patterned to expose the pads. The method is disclosed for damascene and non-damascene metal.