| 摘要 |
A semiconductor memory device including a fuse control circuit for providing with a plurality of fail word line addresses written in its own circuit in advance and outputting a redundancy signal representing that an input address is the same as one of the fail word line addresses, and a normal word line interruption signal, a redundancy word line controller for inputting the redundancy signal and activating a designated redundancy word line; and a normal word line controller, for activating a word line corresponding to the input word line address, which is operated or interrupted in response to the normal word line interruption signal, wherein the normal word line interruption signal has a first logic state (logic low) at a pre-charge interval or when a same address as one of the fail word line addresses is inputted, and has a second logic state (logic high) when a normal address is inputted, and the redundancy signal has a first logic state (logic low) when a same address as one of the fail word line addresses is inputted, and a second logic state (logic high) at the pre-charge interval or when an address different from the fail word line addresses is inputted.
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