| 摘要 |
A new method of increasing access cycle time in a memory device is achieved. The memory device has three operating states of standby, read, and write. The data lines in the memory device may be pre-charged. The method comprises, first, during the standby state, the data lines are pre-charge. Second, during the write state, the data lines are not pre-charged. Third, during the read state, the data lines are not pre-charged. During a transition from the write state to the read state, the data lines are pre-charged.
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