发明名称 Reliability circuit for applying an AC stress signal or DC measurement to a transistor device
摘要 An integrated circuit is provided, which includes a transistor device under test, an AC drive circuit, an AC bias circuit and a DC bias circuit. The AC drive circuit generates an AC drive signal. The AC bias circuit biases the transistor device under AC bias conditions in response to the AC drive signal. The DC bias circuit biases the transistor device under DC bias conditions. A switch circuit selectively couples the transistor device to the AC bias circuit in an AC stress mode and to the DC bias circuit in a DC measurement mode.
申请公布号 US7183791(B2) 申请公布日期 2007.02.27
申请号 US20040962262 申请日期 2004.10.11
申请人 LSI LOGIC CORPORATION 发明人 WALKER JOHN D.;PARK SANGJUNE;SCHULTZ RICHARD T.
分类号 G01R31/26 主分类号 G01R31/26
代理机构 代理人
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