发明名称 METAL OXIDE CERAMIC THIN FILM ON BASE METAL ELECTRODE
摘要 A method including forming a capacitor structure including an electrode material and a ceramic material on the electrode material; and sintering the ceramic material under a condition where a point defect state of the ceramic material defines the ceramic material as insulating without oxidation of the electrode material. A method including depositing a ceramic material on an electrically conductive foil; and sintering the ceramic material in a reducing atmosphere at a temperature that minimizes the mobility of point defects to transition to a level corresponding to a greater conductivity of the ceramic material. An apparatus including a first electrode; a second electrode; and a ceramic material disposed between the first electrode and the second electrode, wherein the ceramic material includes a thickness less than one micron and a leakage current corresponding to a thermodynamic state wherein a concentration of mobile point defects have been optimized.
申请公布号 KR20070022806(A) 申请公布日期 2007.02.27
申请号 KR20067027427 申请日期 2005.06.23
申请人 发明人
分类号 H01G4/12;H01G4/00 主分类号 H01G4/12
代理机构 代理人
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