发明名称 |
Method for operating a semiconductor processing apparatus |
摘要 |
A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.
|
申请公布号 |
US7183715(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20040997888 |
申请日期 |
2004.11.29 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
KANNO SEIICHIRO;NISHIO RYOJI;YOSHIOKA KEN;KANAI SABUROU;KIHARA HIDEKI;YAMAMOTO HIDEYUKI |
分类号 |
H01J7/24;H01L21/00 |
主分类号 |
H01J7/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|