发明名称 Semiconductor memory devices having separate read and write global data lines
摘要 Semiconductor memory devices include a memory cell array region having a plurality of memory cells, a local data I/O line pair that is electrically connected to the plurality of memory cells, a local sense amplifier that is electrically connected to the local data I/O line pair, a read global data I/O line pair that is electrically connected to the local sense amplifier and that is configured to transmit data during a read operation and a write global data I/O line pair that is electrically connected to the local sense amplifier that is configured to transmit data during a write operation.
申请公布号 US7184347(B2) 申请公布日期 2007.02.27
申请号 US20050186691 申请日期 2005.07.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JAE-YOUNG;KIM CHI WOOK;SEO SUNG-MIN
分类号 G11C7/02 主分类号 G11C7/02
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