发明名称 |
Semiconductor memory devices having separate read and write global data lines |
摘要 |
Semiconductor memory devices include a memory cell array region having a plurality of memory cells, a local data I/O line pair that is electrically connected to the plurality of memory cells, a local sense amplifier that is electrically connected to the local data I/O line pair, a read global data I/O line pair that is electrically connected to the local sense amplifier and that is configured to transmit data during a read operation and a write global data I/O line pair that is electrically connected to the local sense amplifier that is configured to transmit data during a write operation.
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申请公布号 |
US7184347(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20050186691 |
申请日期 |
2005.07.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JAE-YOUNG;KIM CHI WOOK;SEO SUNG-MIN |
分类号 |
G11C7/02 |
主分类号 |
G11C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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