发明名称 PROCEDE DE FABRICATION D'UN SUBSTRAT DE MATRICE DE TRANSISTORS A COUCHE MINCE
摘要 A method of manufacturing a thin film transistor capable of simplifying a substrate structure and a manufacturing process is disclosed. The method of manufacturing a thin film transistor array substrate includes involves a three-round mask process, which includes: forming a gate pattern on a substrate; forming a gate insulating film on the substrate having the gate pattern thereon; forming a source/drain pattern and a semiconductor pattern; forming a passivation film to protect the thin film transistor on an entire surface of the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern; and forming a transparent electrode pattern being extended from a lateral surface of the passivation film pattern and formed at an area except for the passivation film pattern.
申请公布号 FR2860918(B1) 申请公布日期 2007.02.23
申请号 FR20040010642 申请日期 2004.10.08
申请人 LG. PHILIPS LCD CO.,LTD. 发明人 YOO SOON SUNG;CHO HEUNG LYUL
分类号 H01L21/336;G02F1/136;G02F1/1362;G02F1/1368;G09F9/30;G09F9/35;H01L21/00;H01L21/027;H01L21/70;H01L21/768;H01L21/77;H01L21/84;H01L27/12;H01L29/786 主分类号 H01L21/336
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