| 摘要 |
<p>A method for fabricating a semiconductor device is provided to enhance etch selectivity of a photoresist layer by using a lamination structure of O-BARC/Si-O polymer/C-rich polymer. An insulating layer(32) is formed on a semiconductor substrate(31) having a predetermined lower structure. A lamination structure of a C-rich polymer layer(33), a Si-O polymer layer(34), and an organic anti-reflective layer is formed on the insulating layer. A photoresist layer is formed on an entire surface of the semiconductor substrate. A photoresist pattern is formed by performing a selective exposure and development process using an exposure mask. The lamination structure and the insulating layer are etched by using the photoresist pattern as an etch barrier.</p> |
