| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ohmic contact layer of a light-emitting device that has excellent optical and electrical characteristics. <P>SOLUTION: The light-emitting device has an n-type clad layer, a p-type clad layer, an active layer positioned between the n-type clad layer and the p-type clad layer, and an ohmic contact layer inclusive of a first film that contacts the p-type clad layer or the n-type clad layer and contains a transparent conductive zinc oxide (ZnO) in a one-dimensional nano-structure, the one-dimensional nano-structure referring to any of a nano-column, a nano-rod and a nano-wire. <P>COPYRIGHT: (C)2007,JPO&INPIT |
