| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for an epitaxial wafer for an LED reducing oxygen as impurities and being capable of manufacturing a red light-emitting diode with a high brightness and a high yield and the epitaxial wafer for the LED. <P>SOLUTION: In the manufacturing method for the epitaxial wafer having a single hetero-junction structure, an AlGaAs active layer and an AlGaAs clad layer are formed successively on a substrate by a liquid-phase epitaxial method. In the manufacturing method, a raw-material solution and a graphite growth jig are purified by holding a growth in-oven temperature for approximately two hr at approximately 250°C before the growth of an epitaxial layer, and continuously conducting an evacuation and an H<SB>2</SB>purge during the holding of the growth in-oven temperature, and a growth is conducted. <P>COPYRIGHT: (C)2007,JPO&INPIT |
