发明名称 METHOD AND DEVICE FOR WAFER-LEVEL BURN IN
摘要 PROBLEM TO BE SOLVED: To provide a method and device for wafer-level burn in of high reliability capable of preventing wear and burn of a probe, by reducing the variations in the in-plane temperature of a wafer due to heating at the application of electrical load. SOLUTION: A temperature adjusting plate 106 is divided into at least two areas. A heater 408 applies a temperature load corresponding to the areas. In a temperature sensor 409, its control system is divided and separately controlled to a set temperature, with a cooling source provided to each area for controlling the heater 408. The measurement values of them are compared and measurement values for control output calculation are switched accordingly for controlling, resulting in reduction of the variation in the in-plane temperature of the wafer due to heating, when an electrical load is applied. Accordingly, wear and burn of the probe are prevented, for reliable method and device for wafer level burn-in. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007048854(A) 申请公布日期 2007.02.22
申请号 JP20050230194 申请日期 2005.08.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SEGAWA AKITSUGU;SANADA MINORU
分类号 H01L21/66;G01R31/26 主分类号 H01L21/66
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