| 摘要 |
In a ridge waveguide semiocnductor laser diode comprising a ridge (14a) for forming a waveguide constructed in the p-type semiconductor layer (14), a protective insulating film (17) covering the ridge so as to expose at least a portion of the top surface of the ridge, a p-side ohmic electrode (15) which establishs ohmic contact with the ridge exposed from the protective insulating film, and a p-side pad electrode (19) provided so as to electrically connect to the p-side ohmic electrode, a diffusion prevention layer (30) capable of preventing the diffusion of a low melting point metal is disposed between the p-side ohmic electrode and the p-side pad electrode, and the diffusion prevention layer covers at least the ridge exposed from the protective insulating film (17). <IMAGE> |
