| 摘要 |
A method of forming a superconductive device is provided, including providing a substrate (112) having a dimension ratio of not less than about 102, depositing a buffer film to overlie the substrate by ion beam assisted deposition utilizing an IBAD system (100) & chamber (110), providing an ion beam via a RF ion source (116), plus an electron beam evaporator (114), monitoring spatial ion beam density of the ion beam via system (120) over a target area, and depositing a superconductor layer to overlie the buffer film. Monitoring may be carried out by utilizing an ion detector having an acceptance angle of not less than 10°, and the components of the process chamber have their operations and communications coordinated via controller (122).
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