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发明名称
Charge injection transistor using high-k dielectric barrier layer
摘要
申请公布号
KR100684480(B1)
申请公布日期
2007.02.22
申请号
KR20000035302
申请日期
2000.06.26
申请人
发明人
分类号
H01L29/772;C23C14/08;C23C14/58;H01L21/02;H01L21/28;H01L21/316;H01L21/768;H01L23/522;H01L23/532;H01L29/51;H01L29/76
主分类号
H01L29/772
代理机构
代理人
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地址
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