| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which defective products are reduced by preventing the occurrence of plating burrs. <P>SOLUTION: In the method for manufacturing a semiconductor device 28 by: forming plating masks 38 and 39 having a noble metal plating layer 35 as an uppermost layer at a predetermined part on the surface or the backside of a lead frame material 10; etching the lead frame material 10 sequentially using the plating masks 38 and 39 as a resist mask and conducting it electrically with a semiconductor element 18 arranged in a sealing resin 21; and then forming a projecting external connection terminal 22 at a lower portion, wherein lowermost layer of the plating masks 38 and 39 includes base metal plating or noble metal plating 33 exhibiting etching liquid resistance. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
