| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that can be manufactured by a simple method, and has stable laser characteristics and a ridge waveguide type stripe structure. SOLUTION: In the semiconductor light-emitting device, there are a compound semiconductor layer having an active layer, a selective growth protective film 110 that is formed on the compound semiconductor layer, and has an opening 111 in a region corresponding to the stripe region into which current is injected, and a ridge type compound semiconductor layer that is formed so that the opening is covered on a substrate 101, where a surface has an off angle to a low-order orientation. COPYRIGHT: (C)2007,JPO&INPIT
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