MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which has high productivity and can efficiently activate the impurities in source and drain regions. SOLUTION: The semiconductor device manufacturing method includes processes of forming a semiconductor film on a substrate; forming a gate insulation film on the semiconductor film: forming a gate electrode on the gate insulation film; selectively implanting impurities into predetermined regions of the semiconductor film to form the source and drain regions; forming an interlayer insulation film on the gate insulation film and on the gate electrode; forming a light absorption layer on the interlayer insulation film; forming a protection insulation layer on the light absorption layer; and irradiating light on the light absorption layer via the protection insulation film, and activating the impurities in the source and drain regions by the heat from the light absorption layer heated by irradiation of light. COPYRIGHT: (C)2007,JPO&INPIT