| 摘要 |
PROBLEM TO BE SOLVED: To inhibit the deterioration of the characteristics of a compound semiconductor element under a high-temperature and high-humid environment. SOLUTION: An ohmic electrode 6 laminating a lower-layer Ti layer 2, a diffusion preventive layer 3, an upper-layer Ti layer 4 and a metallic layer (Au) 5 are provided on a p-type GaAs layer 1. The diffusion preventive layer 3 is formed in a structure using tantalum (Ta) or niobium (Nb). According to the structure, the interdiffusion of Ga and As in the p-type GaAs layer 1 and Au in the metallic layer 5 is prevented while the fluctuation of the resistivity of the ohmic electrode 6 can be suppressed at a small value under the high-temperature and high-humid environment. COPYRIGHT: (C)2007,JPO&INPIT
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