| 摘要 |
PROBLEM TO BE SOLVED: To prevent occurrence of unwanted parasitic capacitance between a pad and a circuit which results in degradation of characteristics of the circuit. SOLUTION: If the high order metal used in a semiconductor device 1 comprises three layers, it is used as a power supply ring with a metal 4 of bottom layer among the three layers as a first signal line connected to the pad, while a metal 5 of second and third layers is selected as a plurality of second signal lines for a power supply line. The interval between metals 5 is secured by, for example, 5μm or more. In a vacant space around the metal 5, for example between the side of the metals 5 or the metals 5, a plurality of connection points 3 are provided for connecting the pad to the metal 4. COPYRIGHT: (C)2007,JPO&INPIT
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