| 摘要 |
A thin film diode array panel comprising: an insulating substrate ( 110 ); first and second redundant gate lines ( 141, 142 ) made of an opaque conductor and formed on the insulating substrate; first and second floating electrodes ( 143, 144 ) made of an opaque conductor, formed on the insulating substrate, and disposed between the first and second redundant gate lines ( 141, 142 ); an insulating layer ( 151, 152 ) formed on the first and second floating electrodes ( 143, 144 ); a first gate line ( 121 ) formed on the first redundant gate line ( 141 ) and including a first input electrode ( 123 ) overlapping the first floating electrode ( 143 ) where the insulating layer ( 151 ) is interposed between the first input electrode and the first floating electrode; a second gate line ( 122 ) formed on the second redundant gate line ( 142 ) and including a second input electrode ( 124 ) overlapping the second floating electrode ( 144 ) where the insulating layer ( 152 ) is interposed between the second input electrode ( 124 ) and the second floating electrode ( 144 ); and a pixel electrode ( 190 ) including a first contact electrode ( 191 ) overlapping the first floating electrode ( 143 ) where the insulating layer ( 151 ) is interposed between the first contact electrode ( 191 ) and the first floating electrode ( 143 ), a second contact electrode ( 192 ) overlapping the second floating electrode ( 144 ) where the insulating layer ( 152 ) is interposed between the second contact electrode ( 192 ) and the second floating electrode ( 144 ), and a main body is provided.
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