| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering target for a phase-change memory, which can improve rewriting property and crystallization speed of the phase-change memory, by reducing, as much as possible, impurities that segregate and condense in the vicinity of a boundary face between a memory point and a non-memory point and cause reduction in the number of write/rewrite cycles and erasability, especially, impurity elements that affect the crystallization speed, and reducing compositional deviation from the intended composition and compositional segregation in the target, and to provide its production method. <P>SOLUTION: The sputtering target for the phase-change memory comprises not less than three elements including at least one element chosen from antimony, tellurium and selenium as the main component and has a compositional deviation from the intended composition of ±1.0 at% or less. A phase-change memory film is formed by using the target. <P>COPYRIGHT: (C)2007,JPO&INPIT |
