| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method which can remarkably reduce the interface level density with good reproducibility at the time of manufacturing a MOSFET using a silicon semiconductor crystal, and which especially is effective even for a (111) plane besides a (100) plane which is usually used as the principal plane of a silicon crystal. SOLUTION: In a process of manufacturing the MOSFET, fluorine (F) is made to exist on the semiconductor interface or on the surface of a structure which consists of a semiconductor substrate and an insulation film and/or a polycrystalline silicon film deposited on the principal plane of the substrate, using ion implantation and thermal diffusion, and the semiconductor substrate is annealed under a desired condition in an atmosphere containing a hydrogen (H<SB>2</SB>) gas. COPYRIGHT: (C)2007,JPO&INPIT
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