| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of forming a dense ferroelectric thin film orientated regardless of the material of a substrate with improved productivity, and to provide a method of forming an insulator layer. SOLUTION: The forming method of the insulator layer comprises a step S110 for manufacturing a ferroelectric particle dispersion by dispersing ferroelectric particles made of crystalline Bi<SB>4</SB>Ti<SB>3</SB>O<SB>12</SB>, or the like; a step S120 for spin-coating the substrate with the ferroelectric particle dispersion and forming a ferroelectric particle deposition film where flat particles are deposited by baking; and steps S150, S161, S162, and the like for spin-coating the ferroelectric particle deposition film with a compound that can become a dielectric or a ferroelectric by baking and forming a flattened ferroelectric thin film by heating. A configuration for filling the gap between ferroelectric particles is provided. COPYRIGHT: (C)2007,JPO&INPIT
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