| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can control a generation of a crack and peeling on a resin BM and control a deterioration of coverage of an upper layer of the resin BM, even though a black resin is used as a material for the resin BM in order to improve a brightness contrast and a color contrast. SOLUTION: A manufacturing method of a semiconductor device is to form a non-photosensitive black resin layer on a base plate 1, to form a positive resist layer 3 on the above non-photosensitive black resin layer, to make the above positive resist layer exposed, to form a resin black matrix layer 2a composed of the above non-photosensitive black resin layer on the above base plate by developing the above positive resist layer with a first developer and by etching the above non-photosensitive black resin layer, to expose the unexposed resin black matrix layer 2 composed of the above non-photosensitive black resin layer left after a development, and to dissolve and remove the above positive resist layer by using a second developer. COPYRIGHT: (C)2007,JPO&INPIT
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