SCHOTTKY DIODE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To realize a Schottky diode of high breakdown voltage which uses a nitride semiconductor without passing through a complicated process such as ion implantation. SOLUTION: The Schottky diode is provided with: a first nitride semiconductor layer 12 formed on a substrate 11; and second nitride semiconductor layers 15 which are selectively formed on the first nitride semiconductor layer 12 and have conduction types different from the first nitride semiconductor layer 12. The diode is also provided with: a Schottky electrode 13 which is selectively formed on the first nitride semiconductor layer 12, and whose part is brought into contact with the upper face of the second semiconductor layer; and an ohmic electrode 14 formed on the first nitride semiconductor layer 12 by leaving an interval with the Schottky electrode 13. COPYRIGHT: (C)2007,JPO&INPIT