| 摘要 |
<P>PROBLEM TO BE SOLVED: To lower forward voltage by adequately preventing an electric short-circuit between n-type and p-type semiconductor layers, and assuring the electric continuity of a semiconductor light emitting device to each electrode when a semiconductor light emitting device is mounted by anisotropic conductive adhesion. <P>SOLUTION: This semiconductor light emitting device A1 comprises a first electrode 3A that electrically connects to an n-type semiconductor layer 20, a second electrode 3B formed on a semiconductor laminate 2 in a way that it electrically connects to a p-type semiconductor layer 21, and an insulation protection film 4 covering the semiconductor laminate 2 in a way that a die pad 30 to be connected to the other component is exposed in the second electrode 3B. The second electrode 3B is configured in a way that the thickness of the die pad 30 is larger than that of any other part of this second electrode 3B or it is composed of the die pad 30 only. <P>COPYRIGHT: (C)2007,JPO&INPIT |
