SEMICONDUCTOR LIGHT EMITTING ELEMENT, LIGHTING SYSTEM EMPLOYING IT, AND PROCESS FOR FABRICATING SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To enhance light take-out efficiency in a light emitting diode consisting of a plurality of nanocolumns.

SOLUTION: In the light emitting diode D1 where an n-type GaN nanocolumn layer 2, and a light emitting layer 3 are formed on a silicon substrate 1, and after growing a p-type GaN contact layer 4 epitaxially while enlarging the nanocolumn diameter, a translucent p-type electrode 5 is formed, the n-type GaN nanocolumn layer 2 is provided with a absorption/re-emission layer 6 achieved with a multiple quantum well structure or a double heterostructure. Light not entering the escape cone of the light emitting layer 3 but radiated therefrom in the axial direction of nanocolumn is absorbed by the absorption/re-emission layer 6 and light is re-emitted from that escape cone to the outside of the nanocolumn, and thereby the rate of light being absorbed by the silicon substrate 1 or the translucent p-type electrode 5 is reduced. Consequently, light confined in the nanocolumn can be taken out efficiently and light take out efficiency can be enhanced furthermore.

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