| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for growing an oxide crystal of nitrogen (N) dope capable of setting concentration of nitrogen (N) at a desired value and uniformly forming the nitrogen (N) concentration from the surface along the depth direction. <P>SOLUTION: A nitrogen source gun 7 for supplying ammonia (NH<SB>3</SB>) gas to an ultrahigh vacuum container 2 is provided oppositely to an exhaust port 8 substantially across a stage 3 to form a flow path of ammonia (NH<SB>3</SB>), for rapidly exhausting the ammonia (NH<SB>3</SB>) introduced into the container 2 after it reaches a ZnO substrate 4 mounted on the stage 3. As a result, accumulation of the ammonia (NH<SB>3</SB>) in the ultrahigh vacuum container is alleviated, so that the concentration of nitrogen (N) in a crystal growth layer on the ZnO substrate can be set to a desired concentration, and in addition the concentration of nitrogen (N) can be formed uniformly from the surface along the depth direction. <P>COPYRIGHT: (C)2007,JPO&INPIT |
