| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor forming substrate that is fabricated easier than a conventional orientation flat or index flat, and can be visually checked for front/rear determination, and also to provide a nitride semiconductor substrate and a method for manufacturing the substrate. <P>SOLUTION: This method creates through-holes 5 penetrating from a front surface to a rear surface at the margin of a substrate, so that the front or rear surface is determined by a difference in the number of through-holes or a difference in a distance from the center. These through-holes are formed concurrently when an epitaxial layer is grown with an area not growing normally at the top, by either applying a non-GaN material (for example, carbon particle) to any location on a seed crystal surface or making uneveness on that surface, through nitride semiconductor vapor phase epitaxy. <P>COPYRIGHT: (C)2007,JPO&INPIT |
