| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing zinc oxide crystal by a gas phase transport method capable of manufacturing a quality zinc oxide single crystal which has a large size and contains none or only a little of polycrystals. SOLUTION: A vacuum-sealed growing vessel 10 has a temperature gradient along its length from one end to the other end, in which a raw material part is placed at a high temperature part of the growing vessel and a crystal deposition part 15 is placed at a low temperature part. Inside the growing vessel, a quartz tube (partition space) for holding a raw material 14 which blocks the space between the high temperature part and the low temperature part and has an opening 13 at least at a part of a high temperature side having a higher temperature than the high temperature part. At a part corresponding to the high temperature part inside the partition space, the raw material part which is packed with a ZnO sintered body as a raw material 11 and a carbon rod as a transport agent 12 is placed. By implementing a gas phase transport through the opening of the partition space between the raw material part and the crystal deposition part, a zinc oxide crystal is deposited at the low temperature part of the growing vessel. COPYRIGHT: (C)2007,JPO&INPIT
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