| 发明名称 |
STRAINED SILICON ON INSULATOR (SSOI) STRUCTURE WITH IMPROVED CRYSTALLINITY IN THE STRAINED SILICON LAYER |
| 摘要 |
This invention generally relates to strained silicon on insulator (SSOI) structure, and to a process for making the same. The process includes a high temperature thermal anneal of a SSOI structure to improve the crystallinity of the strained silicon layer, while maintaining the strain present therein.
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| 申请公布号 |
US2007042566(A1) |
申请公布日期 |
2007.02.22 |
| 申请号 |
US20060461653 |
申请日期 |
2006.08.01 |
| 申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
SEACRIST MICHAEL R.;FEI LU |
| 分类号 |
H01L21/30;H01L33/00 |
主分类号 |
H01L21/30 |
| 代理机构 |
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