| 摘要 |
The invention relates to a process for vapor deposition of one or more compounds onto a support, in which (i) the compound is introduced in a solid or gaseous state into a carrier gas stream, (ii) the compound is present in a gaseous state in the carrier gas stream, (iii) the gaseous compound is precipitated, (iv) the compound precipitated in step (iii) is once again brought into the gaseous state, and (v) the gaseous compound is subsequently precipitated on the support, wherein the carrier gas stream comprising the gaseous compound(s) is cooled to a temperature below the sublimation temperature of the compound(s) by introduction of a gas stream.
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