| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method whereby cracking is prevented when heteroepitaxial growing of a group III nitride semiconductor is applied to a silicon substrate. SOLUTION: Crystal defects for inhibiting normal epitaxial growing on a surface of a substrate are provided onto the surface of the substrate in a grating form so as to grow normal epitaxial films on the small divided regions, thereby releasing the occurrence of an internal stress. COPYRIGHT: (C)2007,JPO&INPIT
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