| 摘要 |
PROBLEM TO BE SOLVED: To prevent an increase in parasitic capacitance and the occurrence of leakage in a crossing portion between a signal wiring and a bias wiring in a conversion apparatus having a stacked type FPD. SOLUTION: The apparatus has a switching element region where a plurality of switching elements formed on an insulation substrate are arranged in row and column directions; a conversion element region where a plurality of conversion elements formed on the switching element region are arranged in the row and column directions; and a pixel region having a plurality of pixels consisting of the switching elements and the conversion elements arranged on the switching elements and connected thereto. A plurality of signal wirings each made of a second metal layer are connected to the plurality of switching elements in a column direction, a plurality of bias wirings each made of a fourth metal layer are connected to the plurality of conversion elements, an external signal wiring is formed of the fourth metal layer in a portion out of the pixel region and is connected to the signal wiring, an external bias wiring is formed of the first metal layer on a portion out of the pixel region and is connected to the plurality of the bias wirings, and the external signal wiring crosses the external bias wiring. COPYRIGHT: (C)2007,JPO&INPIT |
