| 发明名称 |
METHOD FOR FORMING RHENIUM BASED FILM, METHOD FOR FORMING GATE ELECTRODE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND COMPUTER READABLE MEMORY MEDIUM |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a rhenium based film where a rhenium based film in which the formation of an oxide film on the surface is suppressed can be formed. SOLUTION: A rhenium based film is formed by: a first stage where a rhenium based film is formed on a substrate; and a second stage where the surface of the formed rhenium based film is contacted with alcohols. COPYRIGHT: (C)2007,JPO&INPIT
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| 申请公布号 |
JP2007046105(A) |
申请公布日期 |
2007.02.22 |
| 申请号 |
JP20050231548 |
申请日期 |
2005.08.10 |
| 申请人 |
TOKYO ELECTRON LTD |
发明人 |
YAMAZAKI HIDEAKI |
| 分类号 |
C23C16/16;C23C16/56;H01L21/28;H01L21/285;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
C23C16/16 |
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