发明名称 Dielectric with sidewall passivating layer
摘要 A polymer dielectric material includes a sidewall passivating layer on the opposing sidewall surfaces of an opening in the dielectric layer for a via or trench. The sidewall passivating layer may be deposited on the sidewall surfaces, as well as the bottom surface of an opening having a first depth in the polymer dielectric layer. After the sidewall passivating layer is added, the depth of the opening may be increased to a second depth. The sidewall passivating layer provides a barrier to removal of the polymer dielectric from the sidewalls, preventing or reducing undercutting below a hard mask.
申请公布号 US2007042598(A1) 申请公布日期 2007.02.22
申请号 US20060590020 申请日期 2006.10.31
申请人 PARK HYUN-MOG 发明人 PARK HYUN-MOG
分类号 H01L21/4763;H01L21/033;H01L21/311;H01L21/768 主分类号 H01L21/4763
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