发明名称 |
METHOD OF FORMING A SILICIDE |
摘要 |
At least one gate electrode is formed on a substrate. A first dielectric layer and a second dielectric layer are formed on the gate electrode, respectively. A portion of the second dielectric layer is removed to form a spacer on either side of the gate electrode. A portion of the first dielectric layer is removed to form a notch between the gate electrode and the spacer, the notch having an aspect ratio greater than 1. A self-aligned silicide process is performed to form a silicide on exposed surfaces of the gate electrode and the first dielectric layer underneath the notch.
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申请公布号 |
US2007042584(A1) |
申请公布日期 |
2007.02.22 |
申请号 |
US20050161756 |
申请日期 |
2005.08.16 |
申请人 |
HUANG JEN-HONG;LI NIEN-CHUNG;SHENG YI-CHUNG;CHEN CHUN-CHIA |
发明人 |
HUANG JEN-HONG;LI NIEN-CHUNG;SHENG YI-CHUNG;CHEN CHUN-CHIA |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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