| 摘要 |
A method for fabricating a semiconductor structure having selective dopant regions in a semiconductor substrate having trenches formed therein I disclosed. In one embodiment, by a dopant source of an auxiliary structure, parts of the semiconductor structure which lie within the trenches are doped by means of a drive-in. In one embodiment, the semiconductor structure is patterned in planar regions outside the trenches and selectively doped by an implantation process.
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