METHOD FOR FORMING TUNGSTEN PLUG OF SEMICONDUCTOR DEVICE

摘要

A method for forming a tungsten plug of a semiconductor device is provided to prevent contact errors and improve reliability of a metal line by suppressing generation of tungsten oxide and removing easily foreign materials. An interlayer dielectric is formed on a semiconductor substrate including predetermined elements(S301). A contact hole is formed by removing selectively the interlayer dielectric(S303). A metal barrier layer and a tungsten layer are formed on the semiconductor substrate(S305). A tungsten plug is formed by using a tungsten chemical mechanical polishing method(S307). The semiconductor substrate is cleaned and dried by using hydrogen-abundant water(S309).