发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To contrive the facilitation and the improvement of reliability of a manufacturing process. <P>SOLUTION: A method of manufacturing a semiconductor device comprises a step (a) for forming a resin layer 30 on a semiconductor substrate 10 having an electrode pad 16 and a passivation film 18, a step (b) for forming a resin protuberance 40 by curing the resin layer 30, a step (c) for forming a conductive layer 50 electrically connected to the electrode pad 16 from the upper part of the electrode pad 16 to the upper part of the resin protuberance 40, a step (d) for molding the resin protuberance 40 and effecting electric inspection by crushing the resin protuberance 40 through the conductive layer 50 by the molded surface 72 of an inspection terminal 70. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007048971(A) 申请公布日期 2007.02.22
申请号 JP20050232285 申请日期 2005.08.10
申请人 SEIKO EPSON CORP 发明人 IMAI HIDEO;TANAKA SHUICHI
分类号 H01L21/3205;H01L21/60;H01L21/66;H01L23/12;H01L23/52 主分类号 H01L21/3205
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