| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD apparatus for forming a thin film with uniform thickness on the surface of an article to be film-formed. SOLUTION: This CVD apparatus controls a traveling speed of a semiconductor wafer so that the speed gradually increases in a path (mark (a)) between a point when the semiconductor wafer reaches a position under a reactant-gas injection device, which is detected by a sensor, and a point when the semiconductor wafer is scheduled to leave the position under the reactant-gas injection device, in comparison with the speed before the semiconductor wafer is detected, then reaches the maximum value (mark (b)), and gradually decreases (mark (c)) to the original value. COPYRIGHT: (C)2007,JPO&INPIT
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