SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce the area of unit cells while preventing deterioration of a capacitance insulating film due to hydrogen in a semiconductor device having the capacitance insulating film using a ferroelectric or high-electric substance.

SOLUTION: The semiconductor device includes: transistors for selecting cells formed on a semiconductor substrate 10; a capacitor row including a plurality of capacitors 27 connected with the source diffusion layer 14B of each transistor and respectively having the capacitance insulating film 25 made of the ferroelectric; and a bit line 17 formed below the capacitor row. The surrounding of the capacitor row including its upper and lower side is covered with a hydrogen-barrier film. The hydrogen-barrier film is composed of: a conductive lower hydrogen-barrier film 21 formed between the transistors and the capacitors 27; an insulating lower hydrogen-barrier film 19 formed between the bit line 17 and the capacitor row; and an upper hydrogen-barrier film 29 formed on the upper side of the capacitor row.

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