| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive element having a large MR rate and a resistance value to be changed greatly due to the sense current. SOLUTION: This magnetoresistive element 10 comprises a pin layer 12 whose magnetization direction is substantially fixed, a free layer 14 whose magnetization direction is changed depending on the external magnetic field, and a spacer layer 16 provided between the pin layer 12 and the free layer 14. Also, this element has such a characteristic that a negative magnetic resistance loop changes to a positive one in a relation between the external magnetic field and the electric resistance, when the sense current flows substantially perpendicularly to boundaries among the pin layer 12, free layer 14 and spacer layer 16 and its value changes. COPYRIGHT: (C)2007,JPO&INPIT
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