发明名称 Electron beam exposure method, hot spot detecting apparatus, semiconductor device manufacturing method, and computer program product
摘要 An EB exposure method includes dividing drawing layer pattern to be transferred onto drawing layer by EB exposure and underlying pattern to be transferred onto an underlying layer of the drawing layer by the EB exposure respectively into unit regions, setting representative figure in each of the unit regions of the drawing and underlying layers, the representative figure set in each of the unit regions of the drawing layer corresponding to the drawing layer pattern of each of the unit regions of the drawing layer, the representative figure set in each of the unit regions of the underlying layer corresponding to the underlying layer pattern of each of the unit regions of the underlying layer, and obtaining influence of proximity effect of an arbitrary region of the drawing layer pattern, based on the representative figure that corresponds to the drawing and underlying layer patterns.
申请公布号 US2007042513(A1) 申请公布日期 2007.02.22
申请号 US20060504666 申请日期 2006.08.16
申请人 NAKASUGI TETSURO 发明人 NAKASUGI TETSURO
分类号 H01L21/66;G01N23/00 主分类号 H01L21/66
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