发明名称 Solid state imaging device
摘要 A CCD image sensor includes photodiodes, vertical transfer CCDs for transferal of signal charge of the photodiodes, and a light shielding layer for protection of the vertical transfer CCDs from light. The light shielding layer covers over recesses disposed above the photodiodes, and each of the recesses has an opening on the bottom to expose a light receiving surface of the photodiode. A light diffusion layer is formed on the light shielding layer in each recess. Since the incident light oblique to an optical axis of a microlens is diffused by the light diffusion layer, the vertical CCDs hardly receive the light coming from around the edges of the opening.
申请公布号 US2007040194(A1) 申请公布日期 2007.02.22
申请号 US20060493764 申请日期 2006.07.27
申请人 FUJI PHOTO FILM CO., LTD. 发明人 MISAWA TAKESHI
分类号 H01L31/113;H01L27/14;H04N5/335;H04N5/359;H04N5/369 主分类号 H01L31/113
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