METHOD OF MANUFACTURING MEMORY DEVICE FOR STABILIZING RESET CURRENT

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a memory device for reducing and stabilizing a reset current.

SOLUTION: The method of manufacturing the memory device that has an oxide layer formed of a resistance converted material to reduce and stabilize the reset current comprises a step of, after forming a lower electrode and an oxide layer on a lower structure, irradiating one region of the oxide layer with an electric beam or ion beam. This reduces and stabilizes the reset current of the memory device.

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